Nanocrystallization and interfacial tension of sol-gel derived memory

被引：7
|
作者：
Wu, Chi-Chang [1 ]
Tsai, Yi-Jen
Chu, Min-Ching
Yang, Shao-Ming
Ko, Fu-Hsiang
Liu, Pin-Lin [1 ]
Yang, Wen-Luh [1 ]
You, Hsin-Chiang [2 ]
机构：
[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan
[2] Asia Univ, Dept Comp Sci & Informat Engn, Taichung 407, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期
关键词：
D O I：
10.1063/1.2904626
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 degrees C annealing, and finally transferred into NCs at 900 degrees C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 degrees C annealing was varied and had higher interfacial energy. The crystallized process at 900 degrees C annealing could minimize the energy. The retention for 900 degrees C annealed sample exhibited less than 30% charge loss after 10(6) s at 125 degrees C measurement. (c) 2008 American Institute of Physics.
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页数：3
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