Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application

被引：28
作者：
Park, Youn Jung [1 ]
Kang, Seok Ju [1 ]
Shin, Yujin [1 ]
Kim, Richard H. [1 ]
Bae, Insung [1 ]
Park, Cheolmin [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
来源：
CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 02期
关键词：
PVDF-TrFE; Ferroelectric; Non-volatile memory; Microimprinting; Patterning; CRYSTALLIZATION; TRANSISTORS;
D O I：
10.1016/j.cap.2010.11.119
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly ordered poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ultrathin films epitaxially grown on friction-transferred polytetrafluoroethylene (PTFE) surface were incorporated in the Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) memory structure. The non-volatile memory properties in epitaxially ordered ferroelectric films were characterized with polarization and capacitance hysteresis curves at low voltage sweep of +/- 12 V and +/- 5 V in each stacking structure of MFM and MFIS, respectively. Furthermore, we present the facile micro-and nano-patterning method of fabricating MFM arrays including highly ordered PVDF-TrFE films by microimprinting. Ultrathin ferroelectric polymer films grown by epitaxy were microimprinted with a silver coated poly-dimethylesiloxane (PDMS) mold at 170 degrees C with excellent quality and the simultaneous transfer of silver electrodes on the imprinted PVDF-TrFE enabled us to fabricate the arrays of MFM capacitors in which ferroelectricity in imprinted region was well-maintained after patterning process at high temperature above 170 degrees C with good thermal stability. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码：E30 / E34
页数：5
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