Epitaxial growth of ferroelectric YMnO3 thin films on Si (111) substrates by molecular beam epitaxy

被引：45

作者：

Imada, S ^{[1
]}

Shouriki, S ^{[1
]}

Tokumitsu, E ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12A期

关键词：

ferroelectric; Y2O3; YMnO3; molecular beam epitaxy; epitaxial growth; Si;

D O I：

10.1143/JJAP.37.6497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best full-width at half maximum (FWHM) values for Y2O3 and YMnO3 films are 0.4 degrees and 1.5 degrees, respectively. Concerning the electrical properties, capacitance-voltage (C-V) characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.3 V.

引用

页码：6497 / 6501

页数：5

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