Fast chaos with slow p-n junction diodes

被引：1

作者：

Mykolaitis, G. ^{[1
,2
]}

Miskinis, R. ^{[1
]}

Bumeliene, S. ^{[1
]}

Tamaseviciute, E. ^{[1
,3
]}

Tamasevicius, A. ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Vilnius Gediminas Tech Univ, Dept Phys, LT-10223 Vilnius, Lithuania

[3] Vilnius State Univ, Dept Radiophys, LT-10222 Vilnius, Lithuania

来源：

ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 03期

关键词：

D O I：

10.12693/APhysPolA.113.971

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate both experimentally and numerically that slow recovery p-n junction diodes can be exploited to generate chaos at high megahertz frequencies. An extremely simple resonator consisting of an inductor in parallel with a diode when externally periodically driven exhibits chaotic response.

引用

页码：971 / 974

页数：4

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