InAs/InGaAs/InP structures for quantum dot infrared photodetectors

被引：4
|
作者：
Landi, SM [1 ]
Pires, MP [1 ]
Tribuzy, CVB [1 ]
Souza, PL [1 ]
Marega, E [1 ]
Silva, AG [1 ]
Guimaraes, PSS [1 ]
机构：
[1] Pontificia Univ Catolica Rio de Janeiro, LabSem, Ctr Estudos Telecomunicacoes, BR-22453900 Rio De Janeiro, Brazil
来源：
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 8 | 2005年 / 2卷 / 08期
关键词：
D O I：
10.1002/pssc.200460752
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Self-assembled InAs quantum dots (QDs) over an InGaAs layer on InP substrates were grown by metalorganic chemical vapor deposition. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence. Optimised stacks of structures were grown for a QD infrared photodetector and their absorption was measured. Magnetotransport measurements on the stacked QD structures revealed tunneling between quantum dot states with an applied magnetic field parallel to the current.
引用
收藏
页码：3171 / 3174
页数：4
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