Vapour growth of bulk ZnSe single crystals

被引：8

作者：

Yakimovich, VN

Levchenko, VI

Yablonski, GP

Konstantinov, VI

Postnova, LI

Kutas, AA

机构：

[1] NASB, Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

[2] NASB, Stepanov Inst Phys, Minsk 220072, BELARUS

[3] Minsk Sci Res Inst Radiomat, Minsk 220024, BELARUS

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 198卷

关键词：

ZnSe; crystal growth; single crystals; photoluminescence; dislocation density;

D O I：

10.1016/S0022-0248(98)01060-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Large, partly faceted ZnSe single crystals have been grown in the closed tube system by the unseeded sublimation travelling heater method (STHM) at 1100 degrees C and undercooling Delta T less than 10 degrees C. As-grown crystals are highly transparent and have very good optical homogeneity by sight. High quality of the crystals was confirmed by double crystal X-ray diffraction which showed the full-width at half-maximum (FWHM) of the rocking curves to be less than 20 arcsec on the (2 2 0) ZnSe diffraction planes of the crystals. Selective chemical etching showed a dislocation density of these faces to be less than 5 x 10(4) cm(-2). The room-temperature photoluminescence (PL) spectrum under pulse excitation consists of only one near-band-edge line. Free and bound exciton as well as donor-acceptor pair recombination are observable at 13 K. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：975 / 979

页数：5

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