Thermal desorption in the lattice gas model - H adsorbed on Si(100)

被引：0
|
作者：
Yagi, Y
Kaji, H
Kakitani, K
Yoshimori, A
机构：
[1] Okayama Univ Sci, Dept Simulat Phys, Okayama 7000005, Japan
[2] Okayama Univ Sci, Dept Elect Engn, Okayama 7000005, Japan
来源：
SURFACE SCIENCE | 2001年 / 493卷 / 1-3期
关键词：
models of non-equilibrium phenomena; thermal desorption; silicon; hydrogen atom; low index single crystal surfaces;
D O I：
10.1016/S0039-6028(01)01199-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thermal desorption rate in the lattice gas model has a diverging enhancement near saturation coverage, which is sometimes overlooked. It exists even for interacting adsorbates in the lattice gas model. This divergence disappears when there are adsorbed sites with slightly higher energies. An example, H/Si(100), is discussed in connection with this feature. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：126 / 130
页数：5
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