HfO2-based Ferroelectric Devices for Low Power Applications

被引：0

作者：

Huang, Qianqian ^{[1
,2
]}

Yang, Mengxuan ^{[1
]}

Luo, Jin ^{[1
]}

Su, Chang ^{[1
]}

Huang, Ru ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Integrated Circuits, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China

[2] Peking Univ, Beijing Lab Future IC Technol & Sci, Beijing 100871, Peoples R China

来源：

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年

基金：

国家重点研发计划;

关键词：

Ferroelectric; negative capacitance; neuromorphic computing; computing in memory;

D O I：

10.1109/EDTM53872.2022.9798017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HfO2-based ferroelectric devices have attracted extensive attention for diverse applications due to its fully CMOS compatibility and highly scalability. For low-power logic applications, we experimentally observed the negative capacitance (NC) effect in HfO2-based ferroelectric film and systematically studied its fundamental physics from the perspective of dynamic NC theory. Moreover, by exploiting the inherent physics of ferroelectric polarization switching, we present that ferroelectric devices can be utilized for the hardware implementation of neuro-inspired computing, providing ultralow hardware-cost and high energy-efficient solutions for artificial intelligence.

引用

页码：285 / 287

页数：3

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