Cryogenic MMIC Low-Noise Amplifiers for V-band

被引：0

作者：

Varonen, Mikko ^{[1
,2
]}

Samoska, Lorene ^{[3
]}

Kangaslahti, Pekka ^{[3
]}

Fung, Andy ^{[3
]}

Gawande, Rohit ^{[3
]}

Soria, Mary ^{[3
]}

Peralta, Alejandro ^{[3
]}

Lin, Robert ^{[3
]}

Lai, Richard ^{[4
]}

Mei, Xiaobing ^{[4
]}

Sarkozy, Stephen ^{[4
]}

机构：

[1] Aalto Univ, Espoo, Finland

[2] VTT Tech Res Ctr Finland, Espoo, Finland

[3] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA

[4] Northrop Grumman Corp, Redondo Beach, CA USA

来源：

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年

基金：

芬兰科学院;

关键词：

Cryogenic; InP HEMT; low-noise amplifiers; MMIC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.

引用

页码：172 / 175

页数：4

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