XPS Study of Thermally Evaporated Ge-Sb-Te Amorphous Thin Films

被引:1
作者
Kumar, Sandeep [1 ]
Singh, Digvijay [1 ]
Thangaraj, R. [1 ]
机构
[1] Guru Nanak Dev Univ, Semicond Lab, Dept Phys, Amritsar 143005, Punjab, India
来源
INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011) | 2011年 / 1393卷
关键词
chalcogenide; thin film; x-ray photoelectron spectroscopy; PHASE-CHANGE; GE2SB2TE5; SILVER;
D O I
10.1063/1.3653649
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Amorphous thin films were prepared from the bulk composition of Ge(22)Sb(22)Te(56) (GST) alloy by thermal evaporation in good vacuum condition. The amorphous nature of as-deposited films was checked with x-ray diffraction (XRD) studies. X-ray photoelectron spectroscopy (XPS) has been used to determine the binding energies of the core electrons in amorphous thin GST films. In XPS, we performed the survey scan from the binding energy (BE) range from 0-1100 eV and core level spectra of Ge 3d, Sb 3d and Te 3d.
引用
收藏
页数:2
相关论文
共 50 条
  • [31] Mechanisms of fast crystallization in amorphous Ge2Sb2Te5 films
    Tanaka, Keiji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (06)
  • [32] Quantitative study of nitrogen doping effect on cyclability of Ge-Sb-Te phase-change optical disks
    Kojima, R
    Kouzaki, T
    Matsunaga, T
    Yamada, N
    OPTICAL DATA STORAGE '98, 1998, 3401 : 14 - 23
  • [33] Physical characterization of thermally evaporated Sn-Sb-Se thin films for solar cell applications
    Bektas, Tunc
    Surucu, Ozge
    Terlemezoglu, Makbule
    Parlak, Mehmet
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (05):
  • [34] A study on the properties of C-doped Ge8Sb2Te11 thin films during an amorphous-to-crystalline phase transition
    Cheol-Jin Park
    Heon Kong
    Hyun-Yong Lee
    Jong-Bin Yeo
    Journal of the Korean Physical Society, 2016, 68 : 859 - 863
  • [35] A study on the properties of C-doped Ge8Sb2Te11 thin films during an amorphous-to-crystalline phase transition
    Park, Cheol-Jin
    Kong, Heon
    Lee, Hyun-Yong
    Yeo, Jong-Bin
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 68 (07) : 859 - 863
  • [36] Chemical bonding characteristics of Ge2Sb2Te5 for thin films
    Shin, MJ
    Choi, DJ
    Kang, MJ
    Choi, SY
    Jang, IW
    Lee, KN
    Park, YJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (01) : 10 - 13
  • [37] Atomic layer deposition of Ge2Sb2Te5 thin films
    Ritala, Mikko
    Pore, Viljami
    Hatanpaa, Timo
    Heikkila, Mikko
    Leskela, Markku
    Mizohata, Kenichiro
    Schrott, Alejandro
    Raoux, Simone
    Rossnagel, Stephen M.
    MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1946 - 1949
  • [38] FEASIBILITY STUDY OF GE-SB-TE PHASE-CHANGE OPTICAL DISK MEDIUM FOR ONE-PASS OVERWRITE DIGITAL AUDIO RECORDING
    NISHIUCHI, K
    AKAHIRA, N
    OHNO, E
    YAMADA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2B): : 653 - 658
  • [39] Band-gap engineering, conduction and valence band positions of thermally evaporated amorphous Ge15-x Sbx Se50 Te35 thin films: Influences of Sb upon some optical characterizations and physical parameters
    Hassanien, Ahmed Saeed
    Sharma, Ishu
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 798 : 750 - 763
  • [40] Optical properties of electron beam evaporated Ge2Sb2Te5 thin films for rewritable high density data storage applications
    Ramanathaswamy, P
    Jayakumar, S
    Kannan, M
    FERROELECTRICS, 2005, 329 : 1023 - 1028