BiCMOS7RF:: a highly-manufacturable 0.25-μm BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy

被引：0

作者：

Baudry, H ^{[1
]}

Szelag, B ^{[1
]}

Deléglise, F ^{[1
]}

Laurens, M ^{[1
]}

Mourier, J ^{[1
]}

Saguin, F ^{[1
]}

Troillard, G ^{[1
]}

Chantre, A ^{[1
]}

Monroy, A ^{[1
]}

机构：

[1] STMicroelect, Ctr Commun Microelect Crolles, F-38921 Crolles, France

来源：

PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes ST new BiCMOS RF technology based on a mature 0.25mum CMOS process. Two SiGe:C HBTs; are implemented for low and high voltage applications. Very low noise figure of 0.4dB at 2GHz is achieved. Other devices like isolated vertical PNP BJT, NLDEMOS and advanced passives are integrated in this technology to address RF circuit needs.

引用

页码：207 / 210

页数：4

共 22 条

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