Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

被引：1

作者：

Jaya, T. P. ^{[1
]}

Pradyumnan, P. P. ^{[1
]}

机构：

[1] Univ Calicut, Dept Phys, Malappuram 673635, Kerala, India

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 12期

关键词：

THIN-FILM; ELECTRONIC-STRUCTURE; CONDUCTING OXIDES; TRANSPARENT; FABRICATION; POWER; SEMICONDUCTORS; ALUMINUM;

D O I：

10.7567/JJAP.56.125502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200W exhibited the highest value of the diode ideality factor (eta value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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