Charge Distribution and Stability of SiO2 Nanoarray Electret

被引:2
作者
Liang, Fei [1 ,2 ,3 ]
Li, Hua Yang [1 ,2 ,3 ,4 ]
Wang, Ying [1 ,2 ,3 ]
Kuang, Shuang Yang [1 ,3 ]
Fan, You Jun [1 ,3 ]
Wang, Zhong Lin [1 ,5 ]
Zhu, Guang [1 ,4 ]
机构
[1] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China
[2] Natl Ctr Nanosci & Technol NCNST, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China
[4] Univ Nottingham Ningbo China, Dept Mech Mat & Mfg Engn, New Mat Inst, Ningbo 315100, Peoples R China
[5] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源
CHEMNANOMAT | 2020年 / 6卷 / 02期
基金
美国国家科学基金会;
关键词
electret; atomic force microscopy; scanning Kelvin probe microscopy; charge distribution; charge stability; SELF-LIMITING OXIDATION; SILICON; STORAGE; FILMS; DECAY;
D O I
10.1002/cnma.201900632
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The devices based on SiO2 electret have significant applications in various MEMS sensors. However, the charge stability of SiO2 electret suffered from the water percolation, which seriously restricts its application. In this work, the long-term charge stability of the SiO2 nanoarray electret (SiO2 NAE) without any water repellent treatment is demonstrated. When the oxidation time is 1.5 h, the potential decay of the SiO2 NAE is less than 46% during 60 days with an original potential of -120 V. The long-term charge stability of the SiO2 NAE is attributed to its unique charge decay process and the large H2O diffusion barrier in the SiO2 NAE: firstly, the charge trapped in the planar part of the SiO2 NAE decays rapidly. Then, residual charge stored in the SiO2 nanoarray. Eventually, the large H2O diffusion barrier in the interface of Si/SiO2 effectively hinders the charge decay. In addition, we demonstrate the unique charge stability of nanoelectret, which has a promising application in developing high performance electret-based devices.
引用
收藏
页码:212 / 217
页数:6
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