Systematic Design and Demonstration of Multi-Bit Generation in Layered Materials Heterostructures Floating-Gate Memory

被引:32
作者
Gwon, Oh Hun [1 ]
Kim, Jong Yun [2 ]
Kim, Han Seul [3 ,4 ]
Kang, Seok-Ju [2 ]
Byun, Hye Ryung [2 ]
Park, Min [5 ]
Lee, Dong Su [5 ]
Kim, Yoon-jeong [5 ,6 ]
Ahn, Seokhoon [5 ]
Kim, Jaekyung [7 ]
Cho, Sang-Joon [7 ]
Yu, Young-Jun [1 ,2 ]
机构
[1] Chungnam Natl Univ, Dept Phys, 99 Daehak Ro, Daejeon 34134, South Korea
[2] Chungnam Natl Univ, Inst Quantum Syst, 99 Daehak Ro, Daejeon 34134, South Korea
[3] Korea Inst Sci & Technol Informat, Natl Inst Supercomp & Networking, Ctr Supercomp Applicat, Daejeon 34141, South Korea
[4] Univ Sci & Technol UST, Dept Data & High Performance Comp Sci, Daejeon 34113, South Korea
[5] Korea Inst Sci & Technol, Inst Adv Composite Mat, Wonju 565905, Jeollabuk Do, South Korea
[6] Hanyang Univ, Dept Chem, Seoul 04763, South Korea
[7] Pk Syst Corp, 109 Gwanggyo Ro, Suwon 16229, South Korea
基金
新加坡国家研究基金会;
关键词
2D materials; floating gate memory; hBN thickness; multi-bit generation map; multi-bit memory; DER-WAALS HETEROSTRUCTURES; NONVOLATILE MEMORY; FLASH; TRANSISTORS; MOBILITY; BUBBLES;
D O I
10.1002/adfm.202105472
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Van der Waals (vdW) heterostructures with 2D materials have shown that atomically thin non-volatile memories are advantageous in terms of integration, while offering high performance and excellent stability. The non-volatile memory behavior of 2D materials has mainly been studied for single-bit operation, and there is growing interest in expanding to multi-bit operation to enhance the storage capacities of memory devices. However, the conditions or rules for generating the desired number of bits in 2D-based multi-bit memory remain to be identified. In this study, multiple bits are successfully created on non-volatile memory based on vdW heterostructure floating-gate memory (FGM) by systematically tuning the dimensions of the 2D materials. In particular, a fingerprint mechanism is established that links the bit number and dimensions of 2D crystals on vdW heterostructures. This approach could enable the precise generation of the desired number of bits in layered-material-based vdW FGMs.
引用
收藏
页数:9
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