86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology

被引：38

作者：

Knapp, H ^{[1
]}

Wurzer, M ^{[1
]}

Meister, TF ^{[1
]}

Aufinger, K ^{[1
]}

Böck, J ^{[1
]}

Boguth, S ^{[1
]}

Schäfer, H ^{[1
]}

机构：

[1] Infineon Technol AG, D-81730 Munich, Germany

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present static and dynamic frequency dividers manufactured in a 200 GHz f(T) SiGe bipolar technology. The static divider has a divide ratio of 32 and operates up to 86.2 GHz. The dynamic divider is based on regenerative frequency division and has a divide ratio of two. It operates up to 110 GHz (limited by the measurement equipment). The power consumption of the static and dynamic frequency dividers is 900 mW and 310 mW, respectively.

引用

页码：1067 / 1070

页数：4

共 9 条

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