Coulomb oscillations of indium-doped ZnO nanowire transistors in a magnetic field

被引：14

作者：

Xu, Xiulai ^{[1
]}

Irvine, Andrew C. ^{[2
]}

Yang, Yang ^{[3
]}

Zhang, Xitian ^{[4
]}

Williams, David A. ^{[1
]}

机构：

[1] Hitachi Europe Ltd, Hitachi Cambridge Lab, Cambridge CB3 0HE, England

[2] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

[3] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[4] Harbin Normal Univ, Heilongjiang Key Lab Adv Funct Mat & Excited Stat, Sch Phys & Elect Engn, Harbin 150025, Peoples R China

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 19期

关键词：

QUANTUM-DOT; ELECTRON; CONDUCTANCE; DONOR; FILMS; BAND;

D O I：

10.1103/PhysRevB.82.195309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase in oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wave function modification in the quantum dots.

引用

页数：5

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