Narrow-linewidth III-V/Si/Si3N4 laser using multilayer heterogeneous integration

被引：119

作者：

Xiang, Chao ^{[1
]}

Jin, Warren ^{[1
]}

Guo, Joel ^{[1
]}

Peters, Jonathan D. ^{[1
]}

Kennedy, M. J. ^{[1
]}

Selvidge, Jennifer ^{[2
]}

Morton, Paul A. ^{[3
]}

Bowers, John E. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[3] Morton Photon, West Friendship, MD 21794 USA

来源：

OPTICA | 2020年 / 7卷 / 01期

关键词：

SILICON-NITRIDE; CHIP;

D O I：

10.1364/OPTICA.384026

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a novel III-V/Si/Si3N4 structure to enable efficient electrically pumped lasing in a fully integrated Si3N4 based external cavity for the first time. The laser shows superior temperature stability and low phase noise. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：20 / 21

页数：2

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