Scanning force microscopy: Application to nanoscale studies of ferroelectric domains

被引：63

作者：

Gruverman, A

Auciello, O

Tokumoto, H

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[3] JRCAT, Natl Inst Adv Interdisciplinary Res, Tsukuba, Ibaraki 305, Japan

来源：

INTEGRATED FERROELECTRICS | 1998年 / 19卷 / 1-4期

关键词：

SFM; ferroelectric domains; thin films piezoelectricity; nanostructures;

D O I：

10.1080/10584589808012695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent advances in nanoscale studies of ferroelectric domains by means of scanning force microscopy (SFM) are reviewed with particular emphasis on investigation of domain structure and polarization reversal in ferroelectric thin films. Applicability of different SFM modes to domain imaging with respect to the physical properties of ferroelectrics is discussed. Examples shown here include results on domain structure observation in single crystals and films by SFM operating in the noncontact, friction, topographic and piezoresponse modes. Domain wall dynamics and fatigue effects as well as SFM spatial resolution of domain structure in thin films are addressed.

引用

页码：49 / 83

页数：35

共 55 条

[1] Scanning force microscopy study of domain structure in Pb(ZrxTi1-x)O-3 thin films and Pt/PZT/Pt and RuO2/PZT/RuO2 capacitors [J].