Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

被引：38
作者：
Kim, Jin Ju [1 ]
Cho, Byungjin [1 ]
Kim, Ki Seok [1 ]
Lee, Takhee [1 ]
Jung, Gun Young [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 18期
关键词：
THIN-FILMS; BISTABILITY; FABRICATION; CONDUCTION;
D O I：
10.1002/adma.201100081
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Unipolar organic resistive memory devices with cell sizes of 2 mu m and 100 nm are demonstrated by a nonaqueous direct metal-transfer (DMT) method, presenting high ON/OFF ratios and reliable memory performance. The developed DMT method can be extensively utilized to fabricate crossbar array devices with nanometer scale junctions, demonstrating the feasibility of highly integrated organic memory device applications.
引用
收藏
页码：2104 / +
页数：5
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