Dependence of output properties on ridge structures and asymmetric facet reflectivity in 0.98-μm InGaAs-InGaAsP-InGaP SQW FP-LD's

The dependence of output performances on the waveguide structures and the facet reflectivity of 8.98-mu m Al-free InGaAs-InGaAsP-InGaP ridge waveguide single-quantum-well Fabry-Perot laser diodes are investigated theoretically and experimentally. In our analysis, lateral and longitudinal spatial hole-burning, carrier-density-dependent optical loss in the well, and gain saturation are considered simultaneously. Permissible ranges of the ridge width, the InGaP cladding thickness, and the front facet reflectivity are presented in conjunction with the desired performance parameters such as maximum kink-free output power, beam divergence, and peak light density at the front facet.