Effect of Inhomogeneously Broadened Linewidth on the Phase Recovery of Quantum-Dot Semiconductor Optical Amplifiers

被引：0

作者：

Kim, J. ^{[1
]}

Meuer, C. ^{[2
]}

Bimberg, D. ^{[2
]}

Eisenstein, G. ^{[2
,3
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, 1 Hoegi Dong, Seoul 130701, South Korea

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] Technion, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | 2010年

基金：

新加坡国家研究基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We numerically demonstrate the phase recovery of quantum-dot (QD) semiconductor optical amplifiers becoming slower at larger inhomogeneous broadening linewidths, caused by the enhanced contribution from the slow carrier recovery of the QD carrier reservoirs. (C) 2010 Optical Society of America

引用

页数：2

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