Photocurrent spectral distribution and relaxation in CdS/CdTe heterojunctions

被引：0

作者：

Vatavu, Sergiu A. ^{[1
]}

Gasin, Petru A. ^{[1
]}

Ferekides, Chris S. ^{[2
]}

Caraman, Iuliana M. ^{[3
]}

机构：

[1] Moldova State Univ, 60 A Mateevici Str, Kishinev 2009, MD, Moldova

[2] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA

[3] Univ Bacau, Engn, R-600115 Bacau, Romania

来源：

THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007 | 2007年 / 1012卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The analysis of the photoelectrical processes in CdS/CdTe heterojunction is carried out by means of photocurrent spectral distribution studies for samples, having CdTe thicknesses in the 2.3-6.6 mu m range (short-circuit and biased regime). The measurement have been performed in the 78-293K temperature range. The charge carriers lifetime is determined (varying from 12 mu s to 280 mu s at 293K).

引用

页码：189 / +

页数：2

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