Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3-based metal-insulator-metal capacitors grown by atomic layer deposition

被引：3

作者：

Garcia, H. ^{[1
]}

Castan, H. ^{[1
]}

Gomez, A. ^{[1
]}

Duenas, S. ^{[1
]}

Bailon, L. ^{[1
]}

Kukli, K. ^{[2
]}

Kariniemi, M. ^{[2
]}

Kemell, M. ^{[2
]}

Niinisto, J. ^{[2
]}

Ritala, M. ^{[2
]}

Leskela, M. ^{[2
]}

机构：

[1] Univ Valladolid, ETSI Telecomunicac, Dept Elect & Elect, E-47011 Valladolid, Spain

[2] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 01期

基金：

芬兰科学院;

关键词：

D O I：

10.1116/1.3525280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SrTiO3 thin films were grown to thicknesses in the range of 18-30 nm by atomic layer deposition using Sr((Pr3Cp)-Pr-i)(2) and (CpMe5)Ti(OMe)(3) as strontium and titanium precursors at 250 and 300 degrees C. Water or ozone was used as oxygen precursor. The films were amorphous in as-deposited state, but crystallized as cubic SrTiO3 after annealing at 650 degrees C. The highest permittivity values, 60-65, were achieved in the films deposited with ozone at 300 degrees C. The films grown at 250 degrees C tended to possess markedly lower leakage currents than those grown at 300 degrees C. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3525280]

引用

页数：5