The influence of Ge on the SiC nucleation on (111)Si surfaces

被引：2
作者：
Pezoldt, J
Wöhner, T
Stauden, T
Schaefer, JA
Masri, P
机构：
[1] Tech Univ Ilmenau, Inst Festkorperelekt, DE-98684 Ilmenau, Germany
[2] Tech Univ Ilmenau, Inst Phys, DE-98684 Ilmenau, Germany
[3] Univ Montpellier, Etud Semicond Grp, FR-34095 Montpellier, France
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
ellipsometry; germanium; heteroepitaxy; molecular beam epitaxy (MBE); RHEED;
D O I：
10.4028/www.scientific.net/MSF.353-356.183
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of germanium on the carbonization of silicon was studied by comparing different methods of introducing Ge into the conversion process. Independent on the method used Ge leads to an increase of the grain size and reduces the SIC growth rate. Tf a Ge incorporation into the SiC/Si interface is desired the Ge predeposition at low temperature is preferable.
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收藏
页码：183 / 186
页数：4
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