Effect of Low-Angle Grain-Boundary Passivation in Flexible Single-Crystal-Like Thin-Film GaAs Solar Cells

被引：2

作者：

Pouladi, Sara ^{[1
]}

Sharma, Sahil ^{[1
]}

Moradnia, Mina ^{[1
]}

Le, Kyle ^{[1
]}

Yarali, Miad ^{[1
]}

Favela, Carlos ^{[1
]}

Stefanov, Ognyan ^{[2
]}

Selvamanickam, Venkat ^{[1
]}

Ryou, Jae-Hyun ^{[1
]}

机构：

[1] Univ Houston, Houston, TX 77204 USA

[2] Univ Calif Berkeley, Berkeley, CA 94720 USA

来源：

2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年

关键词：

defect-state passivation; TOP:S; single-crystal-like GaAs; low-angle grain boundaries; HYDROGEN;

D O I：

10.1109/PVSC43889.2021.9519115

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We theoretically and experimentally study the effect of defect-state passivation at low-angle grain boundaries (LA-GBs) on the photovoltaic performance characteristics of flexible single-crystal-like thin-film GaAs SCs. The 2D modeling of the SCs shows that LA-GBs in the single-crystal-like GaAs still limit their performance, especially for open-circuit voltage (V-OC), and effective passivation of the LA-GBs can boost the photoconversion efficiency remarkably. Two physical hydrogen-based passivation techniques and a chemical sulfide treatment are employed for the passivation of the LA-GBs in the single-crystallike GaAs. Current-voltage (I-V) and photoluminescence (PL) characterization studies demonstrate that sulfur by trioctylphosphine sulfide (TOP:S) solution passivation treatment can significantly increase PL peak intensity and the performance characteristics of flexible single-crystal-like GaAs SCs. A substantial improvement is achieved with increases of similar to 20%, similar to 10%, similar to 13%, and similar to 65% for V-OC, short-circuit current (J(SC)), fill factor (FF), and overall efficiency, respectively.

引用

页码：1789 / 1791

页数：3

共 9 条

[1] High resolution photoemission study of CdSe and CdSe/ZnS core-shell nanocrystals [J].