Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

被引：23

作者：

Chuang, HM ^{[1
]}

Cheng, SY

Chen, CY

Liao, XD

Liu, RC

Liu, WC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Oriental Inst Technol, Dept Elect Engn, Taipei, Taiwan

[3] Chung Shan Inst Sci & Technol, Tao Yuan, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 08期

关键词：

double doped-channel (DDC); pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET); Schottky;

D O I：

10.1109/TED.2003.815145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good do properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the. studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300 < T < 450 K). Therefore, the studied PDDCHFET provides the promise for high-temperature and high-performance microwave electronic applications.

引用

页码：1717 / 1723

页数：7

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