Electronic properties of bilayer and multilayer graphene

被引:256
|
作者
Nilsson, Johan [1 ,2 ]
Castro Neto, A. H. [1 ]
Guinea, F. [3 ]
Peres, N. M. R. [4 ,5 ]
机构
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
[2] Leiden Univ, Inst Lorentz, NL-2300 RA Leiden, Netherlands
[3] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
[4] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal
[5] Univ Minho, Dept Fis, P-4710057 Braga, Portugal
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 04期
关键词
D O I
10.1103/PhysRevB.78.045405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent-potential approximation and some analytical results. Within the model we compute the self-energies, the density of states, and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the dc conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.
引用
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页数:34
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