The effect of oxygen incorporation in ELA poly-Si films and its relation to poly-Si TFT device performance

被引：0

作者：

Voutsas, AT ^{[1
]}

Marmorstein, A ^{[1
]}

Solanki, R ^{[1
]}

机构：

[1] Sharp Microelect Technol Inc, Camas, WA 98607 USA

来源：

PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES | 1999年 / 98卷 / 22期

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中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work we have systematically investigated excimer-laser-annealing of amorphous silicon in vacuum, air and inert gases (argon, nitrogen and helium). We found that control of oxygen contamination is a key process for improving the TFT performance. We showed that vacuum is not necessary for the realization of high performance TFTs and that inert gas ambient could be implemented equally well. The deleterious effects of ELA in air ambient were identified to be the increased density for both grain boundary and inter-grain defects. The former could be compensated, to a certain extent, by hydrogen passivation, but the latter could not. An oxygen concentration of about 0.5at% was identified as the limit to maintain good TFT performance.

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页码：43 / 50

页数：8

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