Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface

被引：2

作者：

Stesmans, A ^{[1
]}

Nouwen, B ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 58卷 / 1-2期

关键词：

Si/SiO2; interface; electron spin resonance; defects; dipolar interaction;

D O I：

10.1016/S0921-5107(98)00274-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Direct experimental evidence for the dipolar interactions within the two-dimensional P-b defect system at the Si/SiO2 interface is provided by the observation of anisotropy in the electron spin resonance spectra. This observation was enabled through distinct interface degradation by post-oxidation annealing in H-2, leading to enhanced P-b density. The data are interpreted within the framework of a computational model based on the magnetostatic approximation of the local field. The results suggest P-b defects to exhibit a self-avoiding behaviour and confirm their occurrence as related to the release of interface stress. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：52 / 55

页数：4

共 11 条

[1] STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE [J].

BROWER, KL .

PHYSICAL REVIEW B, 1986, 33 (07) :4471-4478

[2] DIPOLAR INTERACTIONS BETWEEN DANGLING BONDS AT THE (111) SI-SIO2 INTERFACE [J].

BROWER, KL ;

HEADLEY, TJ .

PHYSICAL REVIEW B, 1986, 34 (06) :3610-3619

[3] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].

BROWER, KL .

APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113

[4]

BROWER KL, 1985, P 13 INT C DEF SEM M

[5] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854

[6]

CARRINGTON A, 1967, INTRO MAGNETIC RESON, P32

[7] EXCHANGE NARROWING OF ELECTRON-SPIN RESONANCE IN A 2-DIMENSIONAL SYSTEM [J].

RICHARDS, PM ;

SALAMON, MB .

PHYSICAL REVIEW B, 1974, 9 (01) :32-45

[8]

Stesmans A., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P25

[9] STRUCTURAL RELAXATION OF PB DEFECTS AT THE (111)SI/SIO2 INTERFACE AS A FUNCTION OF OXIDATION TEMPERATURE - THE PB-GENERATION-STRESS RELATIONSHIP [J].

STESMANS, A .

PHYSICAL REVIEW B, 1993, 48 (04) :2418-2435

[10] Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance [J].

Stesmans, A ;

Afanas'ev, VV .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2271-2273

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