A Single-Inductor Dual-Output Converter With the Stacked MOSFET Driving Technique for Low Quiescent Current and Cross Regulation

被引：27

作者：

Chen, Hsin ^{[1
]}

Huang, Chao-Jen ^{[1
,2
]}

Kuo, Chun-Chieh ^{[1
]}

Lin, Li-Chi ^{[1
]}

Ma, Yu-Sheng ^{[1
]}

Yang, Wen-Hau ^{[1
]}

Chen, Ke-Horng ^{[1
]}

Lin, Ying-Hsi ^{[3
]}

Lin, Shian-Ru ^{[4
]}

Tsai, Tsung-Yen ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect Control Engn, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Hsinchu 31057, Taiwan

[3] Realtek Semicond Corp, Hsinchu 300, Taiwan

[4] Realtek Semicond Corp, R&D Ctr, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 03期

关键词：

Cross regulation (CR); low-dropout (LDO) regulator; single-inductor dual-output (SIDO) converter; stacked MOSFET driver (SMD) technology; stacked MOSFET structures; LOW-DROPOUT REGULATOR; BUCK CONVERTER;

D O I：

10.1109/TPEL.2018.2845124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stacked MOSFET structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked MOSFET driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-mu m process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 mu A under no-load conditions.

引用

页码：2758 / 2770

页数：13

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