In situ coupled Raman and impedance measurements of the reactivity of nanocrystalline SnO2 versus H2S

被引:42
作者
Pagnier, T
Boulova, M
Galerie, A
Gaskov, A
Lucazeau, G
机构
[1] INPG, ENSEEG, UMR CNRS, Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France
[2] Moscow MV Lomonosov State Univ, Dept Chem, Lab Diagnost Inorgan Mat, Moscow 119899, Russia
关键词
D O I
10.1006/jssc.1998.8087
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Nanocrystalline SnO2 produced in different ways has been subjected to H2S at 100 degrees C. The formation of SnSx was deduced from Raman spectra and correlated with the changes in electrical resistance, When the initial resistance of the sample was high, adsorbed SO4 was observed. The agreement of these results with available thermodynamic data and the actual theory of SnO2 sensitivity to H2S is discussed. (C) 1999 Academic Press.
引用
收藏
页码:86 / 94
页数:9
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