Large area X-ray detectors based on amorphous silicon technology

被引:33
|
作者
Moy, JP [1 ]
机构
[1] Trixell, F-38430 Moirans, France
关键词
X-ray imaging; amorphous silicon; pixel; array; scintillator; photoconductor;
D O I
10.1016/S0040-6090(98)01179-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The replacement of the radiographic film in medical imaging is a major issue. It requires an similar to 40 cm wide detector to cover all examinations, an equivalent noise level of 1-5 X-ray quanta per pixel, and spatial resolution in the range of a few hundred microns. The need for entirely electronic imaging equipment has fostered the development of many X-ray detectors, most of them based on an array of amorphous silicon pixels, which is the only technology able to achieve such large areas. Essentially two concepts have been implemented: intermediate conversion of X-rays to light by a scintillator, detected by an array of light sensitive pixels, comprising a photodiode and a switching device, either a TFT or a diode conversion into electron hole pairs in a photoconductor, collected by an array of electrodes and switches. In both cases, charge amplifiers read the generated charges line by line. Scintillator and photoconductor based systems are now close to production. They achieve better image quality than the classic filmscreen combination, at lower X-ray doses and with a much broader dynamic range. Dynamic imaging up to 30 frames/s has been demonstrated. The technical challenges at the level of the a-Si array are the number of acceptable defects, the on/off ratio of the switches, the quantum efficiency of the photodiodes, the memory effects associated with traps in a-Si. Of course, long-term reliability is a major concern for medical components. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:213 / 221
页数:9
相关论文
共 50 条
  • [1] Silicon-based large-area X-ray detectors
    Kaaret, P
    X-RAY TIMING 2003: ROSSI AND BEYOND, 2004, 714 : 423 - 430
  • [2] Amorphous silicon technology for large area digital X-ray and optical imaging
    Nathan, A
    Park, BK
    Ma, QH
    Sazonov, A
    Rowlands, JA
    MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) : 735 - 746
  • [3] Large area amorphous silicon x-ray imagers
    Street, RA
    Wu, XD
    Weisfield, R
    Ready, S
    Apte, R
    Nguyen, M
    Nylen, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2): : 450 - 454
  • [4] Amorphous silicon X-ray detectors
    Hoheisel, M.
    Arques, M.
    Chabbal, J.
    Chaussat, C.
    Ducourant, T.
    Hahm, G.
    Horbaschek, H.
    Schulz, R.
    Spahn, M.
    Journal of Non-Crystalline Solids, 227-230 (Pt 2): : 1300 - 1305
  • [5] Amorphous silicon X-ray detectors
    Hoheisel, M
    Arques, M
    Chabbal, J
    Chaussat, C
    Ducourant, T
    Hahm, G
    Horbaschek, H
    Schulz, R
    Spahn, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 1300 - 1305
  • [6] Thick, large area silicon detectors for a future X-ray timing mission
    Phlips, BF
    Wulf, EA
    Johnson, WN
    Kurfess, JD
    Ray, PS
    Wood, KS
    X-RAY TIMING 2003: ROSSI AND BEYOND, 2004, 714 : 439 - 442
  • [7] Amorphous selenium based x-ray detectors
    Marcovici, S
    SICON/01: ISA/IEEE SENSORS FOR INDUSTRY CONFERENCE, PROCEEDINGS, 2001, : 193 - 196
  • [8] Evaluation of a large-area amorphous-silicon X-ray imager
    Jensen, T
    Gray, JN
    REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION, VOLS 20A AND 20B, 2001, 557 : 1860 - 1867
  • [9] Edgeless silicon sensors for Medipix-based large-area X-ray imaging detectors
    Bosma, M. J.
    Visser, J.
    Evrard, O.
    De Moor, P.
    De Munck, K.
    Tezcan, D. Sabuncuoglu
    Koffeman, E. N.
    JOURNAL OF INSTRUMENTATION, 2011, 6
  • [10] Flexible Amorphous Silicon PIN Diode X-Ray Detectors
    Marrs, Michael
    Bawolek, Edward
    Smith, Joseph T.
    Raupp, Gregory B.
    Morton, David
    FLEXIBLE ELECTRONICS, 2013, 8730