Sub-threshold Inverter for Low Power Consumption

被引:0
|
作者
Sindhu, R. [1 ]
Mehta, Shilpa [2 ]
机构
[1] Proudhadevaraya Inst Technol, Dept E&CE, Hospet, Karnataka, India
[2] Presidency Univ, Dept E&CE, Bangalore, Karnataka, India
来源
PROCEEDINGS OF THE 2018 SECOND INTERNATIONAL CONFERENCE ON INVENTIVE COMMUNICATION AND COMPUTATIONAL TECHNOLOGIES (ICICCT) | 2018年
关键词
Subthreshold voltage; Subthreshold region;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Prediction of Gordon Moore moved the innovation in the direction of integrating more devices on a single chip and from scaling of devices small leakage currents are to be considered. The MOSFET transistor operated in the subthreshold region whose supply voltage is less than the threshold voltage has gained more importance since it reduces the consumption of power. The analysis of the CMOS inverter in subthreshold region is carried in this paper. This paper consists of design of inverter which consumes less power and supply voltage is less than threshold voltage. one of the key design issues in VLSI is to decrease the power consumption. Recently efforts are being made to develop analog circuits working in sub threshold region to reduce the power consumption by the circuits. If the supply voltage decreases energy dissipated also decreases quadratically but the delay increases.
引用
收藏
页码:836 / 839
页数:4
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