Thermally Triggered SiC MOSFET Aging Effect on Conducted EMI

被引：0

作者：

Pu, Shi ^{[1
]}

Ugur, Enes ^{[1
]}

Yang, Fei ^{[1
]}

Xu, Chi ^{[1
]}

Akin, Bilal ^{[1
]}

机构：

[1] Univ Texas Dallas, Power Elect & Drives Lab, Elect & Comp Sci Dept, Richardson, TX 75080 USA

来源：

2018 IEEE 6TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2018年

基金：

美国国家科学基金会;

关键词：

Accelerated aging; EMI/EMC; power factor correction (PFC); SiC power MOSFET; thermal stress; CONVERTER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, thermally triggered SiC MOSFET aging effect on SiC based boost PFC converter's conducted EMI is investigated. Existing EMI evaluation and suppression studies are mostly based on power devices at healthy state. This study provides a comprehensive EMI evaluation at different state of health of SiC MOSFET used in continuous conduction mode (CCM) Boost PFC converter. For this purpose, SiC MOSFET samples are exposed to accelerated aging and the corresponding device degradations are triggered by thermal stresses. To study device characteristics at different state of health, devices under test (DUT) electrical parameters and switching transients are evaluated over aging to support SiC based AC/DC converter's conducted EMI discussion. Respectively, device aging effect on differential mode (DM) noise and common mode (CM) noise changes are discussed in detail. An 800W single phase CCM Boost PFC prototype is built to evaluate both DM and CM noise in band B frequency range (150kHz similar to 30MHz) with experimental testing results. According to the study, high frequency noise decrement is observed after SiC MOSFET is thermally aged.

引用

页码：51 / 55

页数：5

共 11 条

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