Photoluminescence enhancement in porous silicon layers

被引：1

作者：

Sundaram, KB ^{[1
]}

Alizadeh, J

Albin, S

Zheng, J

Lavarias, A

机构：

[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA

[2] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23508 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1998年 / 9卷 / 04期

关键词：

Silicon; Electronic Material; Silicon Substrate; Porous Silicon; Silicon Layer;

D O I：

10.1023/A:1008868421127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porous silicon samples were prepared on diamond scratched n-type and p-type silicon substrates with various resistivities. Photoluminescence studies performed on these porous silicon layers indicated an enhancement of photoluminescence intensity as well as red-shifting for diamond scratched samples compared to unscratched samples. (C) 1998 Kluwer Academic Publishers.

引用

页码：271 / 274

页数：4

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