Bimodal optical characteristics of lateral InGaAs quantum dot molecules

被引：4

作者：

Thongkamkoon, N. ^{[2
]}

Patanasemakul, N. ^{[1
]}

Siripitakchai, N. ^{[1
]}

Thainoi, S. ^{[1
]}

Panyakeow, S. ^{[1
]}

Kanjanachuchai, S. ^{[1
,2
]}

机构：

[1] Chulalongkorn Univ, Dept Elect Engn, Fac Engn, Semicond Device Res Lab, Bangkok 10330, Thailand

[2] Chulalongkorn Univ, Int Sch Engn, Fac Engn, Bangkok 10330, Thailand

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Nanostructures; Characterisation; Molecular beam epitaxy; Semiconducting III-V materials; TEMPERATURE-DEPENDENCE; SIZE DISTRIBUTION; ATOMIC ENSEMBLES; CARRIER TRANSFER; COMMUNICATION; SHAPE;

D O I：

10.1016/j.jcrysgro.2010.11.104

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Lateral InGaAs quantum dot molecules (QDMs) formed by thin-cap-and-regrowth molecular beam epitaxial technique comprise large, central quantum dots (cQDs) and small, satellite quantum dots (sQDs) in close proximity. Temperature-dependent photoluminescent (PL) measurements show that the bimodal size distribution gives rise to bimodal optical characteristics: the cQDs ground-state (GS) emissions vary slowly with temperature while the full-width at half maximum (FWHM) remains almost constant; the sQDs GS emissions, on the other hand, exhibit a sigmoidal temperature shift while the FWHM shows an anomalous temperature behaviour. The bimodal optical characteristics are well described in the existing framework of spatially localised excitons in QDs and inter- and intramolecular carrier redistributions in each and among the QDMs via non-resonant multi-phonon assisted mechanisms. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：206 / 210

页数：5

共 28 条

[1] Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots [J].

Brusaferri, L ;

Sanguinetti, S ;

Grilli, E ;

Guzzi, M ;

Bignazzi, A ;

Bogani, F ;

Carraresi, L ;

Colocci, M ;

Bosacchi, A ;

Frigeri, P ;

Franchi, S .

APPLIED PHYSICS LETTERS, 1996, 69 (22) :3354-3356

[2] Quantum communication between atomic ensembles using coherent light [J].

Duan, LM ;

Cirac, JI ;

Zoller, P ;

Polzik, ES .

PHYSICAL REVIEW LETTERS, 2000, 85 (26) :5643-5646

[3] Long-distance quantum communication with atomic ensembles and linear optics [J].

Duan, LM ;

Lukin, MD ;

Cirac, JI ;

Zoller, P .

NATURE, 2001, 414 (6862) :413-418

[4] Temperature effects on the radiative recombination in self-assembled quantum dots [J].

Fafard, S ;

Raymond, S ;

Wang, G ;

Leon, R ;

Leonard, D ;

Charbonneau, S ;

Merz, JL ;

Petroff, PM ;

Bowers, JE .

SURFACE SCIENCE, 1996, 361 (1-3) :778-782

[5]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[6] Temperature dependent optical properties of self-organized InAs GaAs quantum dots [J].

Heitz, R ;

Mukhametzhanov, I ;

Madhukar, A ;

Hoffmann, A ;

Bimberg, D .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) :520-527

[7] Excitation transfer in self-organized asymmetric quantum dot pairs [J].

Heitz, R ;

Mukhametzhanov, I ;

Chen, P ;

Madhukar, A .

PHYSICAL REVIEW B, 1998, 58 (16) :R10151-R10154

[8] 1.3 μm room-temperature GaAs-based quantum-dot laser [J].

Huffaker, DL ;

Park, G ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566

[9] Temperature-dependent photoluminescent characteristics of lateral InGaAs quantum dot molecules [J].

Kanjanachuchai, S. ;

Thudsalingkarnsakul, N. ;

Siripitakchai, N. ;

Changmoang, P. ;

Thainoi, S. ;

Panyakeow, S. .

MICROELECTRONIC ENGINEERING, 2010, 87 (5-8) :1352-1356

[10] Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage [J].

Kissel, H ;

Müller, U ;

Walther, C ;

Masselink, WT ;

Mazur, YI ;

Tarasov, GG ;

Lisitsa, MP .

PHYSICAL REVIEW B, 2000, 62 (11) :7213-7218

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