TEMPERATURE DEPENDENCES OF PIEZOELECTRIC PROPERTIES OF TEXTURED (Bi1/2K1/2)TiO3-BaTiO3 LEAD-FREE PIEZOELECTRIC CERAMICS

被引:0
作者
Nagata, Hajime [1 ]
Nemoto, Masahiro [1 ]
Hiruma, Yuji [1 ]
Takenaka, Tadashi [1 ]
机构
[1] Tokyo Univ Sci, Fac Sci & Technol, Dept Elect Engn, Chiba 2788510, Japan
来源
ADVANCES IN ELECTROCERAMIC MATERIALS II | 2010年 / 221卷
关键词
TEMPLATED GRAIN-GROWTH; TITANATE NA1/2BI1/2TIO3-BATIO3 CERAMICS; MICROSTRUCTURE DEVELOPMENT; FERROELECTRIC CERAMICS; ELECTRICAL-PROPERTIES; FORMULATION;
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Temperature dependences of piezoelectric properties were investigated for (1-x) (Bi(1/2)K(1/2))TiO(3)-xBaTiO(3) [abbreviated to BKT-BT100x] ceramics prepared by a reactive templated grain growth (RTGG) method using platelike Bi(4)Ti(3)O(12) particles as a template. The degree of orientation, F, which was determined by the Lotgering method using an X-ray diffraction pattern, achieved approximate to 83% in the textured BKT-BT10 ceramic. Textured BKT-BT10 ceramic with a homogeneous microstructure was obtained by the longer sintering time of 100 h. The field-induced strains and piezoelectric properties of the BKT-BT10 ceramic were improved by the grain orientation. In particular, the piezoelectric strain constant, d(33), and the normalized strain, d(33), of the textured BKT-BT10 ceramic in a direction parallel (//) to the tape stacking direction were 121 pC/N and 211 pmN (at 80 kV/cm), respectively. From the temperature dependences of piezoelectric properties, a depolarized temperature, T(d), was about 275 degrees C and the d(33) indicated approximately 278 pC/N at 250 degrees C.
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页码:55 / 61
页数:7
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