Investigation of metallization schemes for high temperature devices based on silicon carbide

被引：3

作者：

Scholz, T

Getto, R

Gottfried, K

Kurz, G

Kriz, J

Lauer, V

机构：

[1] Inst Fresenius Angew Festkorperanal GmbH, D-01109 Dresden, Germany

[2] Tech Univ Chemnitz Zwickau, Fak Elektrotech, Zentrum Mikrotechnol, D-09107 Chemnitz, Germany

[3] Daimler Benz Forsch, D-60528 Frankfurt, Germany

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1998年 / 361卷 / 6-7期

关键词：

Transmission Electron Microscopy; Tungsten; Nitride; Auger; Silicon Carbide;

D O I：

10.1007/s002160050951

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The suitability of several metallization schemes for high temperature sensors and devices based on silicon carbide was investigated. Auger electron spectroscopy (AES) depth profiling was used for the detection of possible interface reactions and thermal induced diffusion processes. Changes in the structure of the films under the influence of high temperature were observed by transmission electron microscopy (TEM). The maximum operation temperature for the metallization with aluminum as cover layer was found at 450 degrees C. The ability of gold with underlying tungsten nitride as diffusion barrier to work at temperatures above 450 degrees C was shown.

引用

页码：570 / 573

页数：4

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