Retrograde Melting and Internal Liquid Gettering in Silicon

被引：16

作者：

Hudelson, Steve ^{[1
]}

Newman, Bonna K. ^{[1
]}

Bernardis, Sarah ^{[1
]}

Fenning, David P. ^{[1
]}

Bertoni, Mariana I. ^{[1
]}

Marcus, Matthew A. ^{[2
]}

Fakra, Sirine C. ^{[2
]}

Lai, Barry ^{[3
]}

Buonassisi, Tonio ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[3] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 35期

基金：

美国国家科学基金会;

关键词：

X-RAY MICROPROBE; MULTICRYSTALLINE SILICON; ELECTRON-MICROSCOPE; BINARY-SYSTEMS; METAL; MECHANISMS; DEFECTS; GROWTH;

D O I：

10.1002/adma.200904344

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Retrograde melting (melting upon cooling) is observed in silicon doped with 3d transition metals, via synchrotron-based temperature-dependent X-ray microprobe measurements. Liquid metal-silicon droplets formed via retrograde melting act as efficient sinks for metal impurities dissolved within the silicon matrix. Cooling results in decomposition of the homogeneous liquid phase into solid multiple-metal alloy precipitates. These phenomena represent a novel pathway for engineering impurities in semiconductor-based systems.

引用

页码：3948 / +

页数：7

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