Theoretical Rationalization of the Singlet-Triplet Gap in OLEDs Materials: Impact of Charge-Transfer Character

被引:121
作者
Moral, M. [1 ]
Muccioli, L. [2 ,3 ]
Son, W. -J. [4 ]
Olivier, Y. [5 ]
Sancho-Garcia, J. C. [1 ]
机构
[1] Univ Alicante, Dept Quim Fs, E-03080 Alicante, Spain
[2] Univ Bologna, Dept Ind Chem Toso Montanari, I-40136 Bologna, Italy
[3] Univ Bordeaux, Lab Chim Polymeres Organ, UMR 5629, F-33607 Pessac, France
[4] Samsung Adv Inst Technol, Yongin 443803, Gyeonggi Do, South Korea
[5] Univ Mons, Lab Chem Novel Mat, B-7000 Mons, Belgium
关键词
ACTIVATED DELAYED FLUORESCENCE; DENSITY-FUNCTIONAL THEORY; LIGHT-EMITTING-DIODES; EXCITED-STATES; CONFIGURATION-INTERACTION; ORGANIC-MOLECULES; HIGH-PERFORMANCE; HARTREE-FOCK; TD-DFT; ELECTROLUMINESCENCE;
D O I
10.1021/ct500957s
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
New materials for OLED applications with low singlet-triplet energy splitting have been recently synthesized in order to allow for the conversion of triplet into singlet excitons (emitting light) via a Thermally Activated Delayed Fluorescence (TADF) process, which involves excited-states with a non-negligible amount of Charge-Transfer (CT). The accurate modeling of these states with Time-Dependent Density Functional Theory (TD-DFT), the most used method so far because of the favorable trade-off between accuracy and computational cost, is however particularly challenging. We carefully address this issue here by considering materials with small (high) singlet-triplet gap acting as emitter (host) in OLEDs and by comparing the accuracy of TD-DFT and the corresponding Tamm-Dancoff Approximation (TDA), which is found to greatly reduce error bars with respect to experiments thanks to better estimates for the lowest singlet-triplet transition. Finally, we quantitatively correlate the singlet-triplet splitting values with the extent of CT, using for it a simple metric extracted from calculations with double-hybrid functionals, that might be applied in further molecular engineering studies.
引用
收藏
页码:168 / 177
页数:10
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