Quartz tuning fork based microwave impedance microscopy

被引：38

作者：

Cui, Yong-Tao ^{[1
]}

Ma, Eric Yue ^{[1
,2
]}

Shen, Zhi-Xun ^{[1
,2
]}

机构：

[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2016年 / 87卷 / 06期

关键词：

RESISTANCE; SENSOR;

D O I：

10.1063/1.4954156

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Microwave impedance microscopy (MIM), a near-field microwave scanning probe technique, has become a powerful tool to characterize local electrical responses in solid state samples. We present the design of a new type of MIM sensor based on quartz tuning fork and electrochemically etched thin metal wires. Due to a higher aspect ratio tip and integration with tuning fork, such design achieves comparable MIM performance and enables easy self-sensing topography feedback in situations where the conventional optical feedback mechanism is not available, thus is complementary to microfabricated shielded stripline-type probes. The new design also enables stable differential mode MIM detection and multiple-frequency MIM measurements with a single sensor. Published by AIP Publishing.

引用

页数：5

共 21 条

[1] Fast, high-resolution atomic force microscopy using a quartz tuning fork as actuator and sensor [J].

Edwards, H ;

Taylor, L ;

Duncan, W ;

Melmed, AJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :980-984

[2] High-speed force sensor for force microscopy and profilometry utilizing a quartz tuning fork [J].

Giessibl, FJ .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3956-3958

[3] Calibrated nanoscale capacitance measurements using a scanning microwave microscope [J].

Huber, H. P. ;

Moertelmaier, M. ;

Wallis, T. M. ;

Chiang, C. J. ;

Hochleitner, M. ;

Imtiaz, A. ;

Oh, Y. J. ;

Schilcher, K. ;

Dieudonne, M. ;

Smoliner, J. ;

Hinterdorfer, P. ;

Rosner, S. J. ;

Tanbakuchi, H. ;

Kabos, P. ;

Kienberger, F. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2010, 81 (11)

[4] Quantitative scanning near-field microwave microscopy for thin film dielectric constant measurement [J].

Karbassi, A. ;

Ruf, D. ;

Bettermann, A. D. ;

Paulson, C. A. ;

van der Weide, Daniel W. ;

Tanbakuchi, H. ;

Stancliff, R. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2008, 79 (09)

[5] Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope [J].

Kundhikanjana, W. ;

Yang, Y. ;

Tanga, Q. ;

Zhang, K. ;

Lai, K. ;

Ma, Y. ;

Kelly, M. A. ;

Li, X. X. ;

Shen, Z-X .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (02)

[6] Tapping mode microwave impedance microscopy [J].

Lai, K. ;

Kundhikanjana, W. ;

Peng, H. ;

Cui, Y. ;

Kelly, M. A. ;

Shen, Z. X. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2009, 80 (04)

[7] Atomic-force-microscope-compatible near-field scanning microwave microscope with separated excitation and sensing probes [J].

Lai, K. ;

Ji, M. B. ;

Leindecker, N. ;

Kelly, M. A. ;

Shen, Z. X. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2007, 78 (06)

[8] Calibration of shielded microwave probes using bulk dielectrics [J].

Lai, K. ;

Kundhikanjana, W. ;

Kelly, M. A. ;

Shen, Z. X. .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[9] Nanoscale microwave microscopy using shielded cantilever probes [J].

Lai K. ;

Kundhikanjana W. ;

Kelly M.A. ;

Shen Z.-X. .

Applied Nanoscience, 2011, 1 (1) :13-18

[10] Imaging of Coulomb-Driven Quantum Hall Edge States [J].

Lai, Keji ;

Kundhikanjana, Worasom ;

Kelly, Michael A. ;

Shen, Zhi-Xun ;

Shabani, Javad ;

Shayegan, Mansour .

PHYSICAL REVIEW LETTERS, 2011, 107 (17)

← 1 2 3 →