Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(100) substrates

被引：6

作者：

Uchitomi, N ^{[1
]}

Sato, S ^{[1
]}

Jinbo, Y ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 216卷 / 1-4期

关键词：

(Ga; Mn)As; diluted magnetic semiconductor; heterointerface; low temperature MBE; magnetotransport; III-V compound;

D O I：

10.1016/S0169-4332(03)00463-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We describe the growth of diluted magnetic semiconductor (DMS) (Ga1-x, Mn-x)As epitaxial layers on n-type Si(1 0 0) substrates using low-temperature-molecular beam epitaxy (LT-MBE). The Mn content of the (Ga1-x, Mn-x)As layers was relatively high (6.2%). The ferromagnetic transition temperature T-C was estimated to be 80 K for the as-grown film, and it strongly depended on the annealing temperature. The p-(Ga, Mn)As/n-Si heterostructures showing a ferromagnetic nature indicated a change in the sign of the Hall coefficient. We found that the transition temperature from n-type to p-type conduction considerably correlates with the T-C. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：607 / 613

页数：7

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