Measurement and characterization of low frequency noise collector current in 0.13 μm SiGe:C HBTs

被引：0
|
作者：
Seif, M. [1 ]
Pascal, F. [1 ]
Sagnes, B. [1 ]
Hoffmann, A. [1 ]
Haendler, S. [2 ]
Chevalier, P. [2 ]
Gloria, D. [2 ]
机构：
[1] Univ Montpellier 2, IES, 2 Pl E Bataillon, F-34095 Montpellier, France
[2] STMicroelectronics, F-38926 Crolles, France
来源：
2015 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2015年
关键词：
HBTs; 1/f noise; collector measurements; BIPOLAR-TRANSISTORS; IMPACT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents an improved measurement setup to directly measure the collector low frequency current spectral density S-IC of SiGe:C Heterojunction Bipolar Transistors (HBTs) when the base is AC short-circuited. A comprehensive analysis of the obtained results is also provided as well as a SPICE based electrical model. The additional white noise observed at high collector biases is due to the contribution of the emitter/base internal resistance. The 1/f noise exhibits a linear evolution with a 1.7 slope versus I-C and is proportional to 1/root Ae. No evolution of S-IC with emitter periphery P-e was observed. From a comparative study of the different 1/f noise term of S-IC we found that S-IC is mainly associated with the spontaneous fluctuations of the intrinsic collector current.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Characterization and modeling of low frequency noise in 0.13 μm BiCMOS SiGe: C heterojunction bipolar trasnsistors
    Seif, M.
    Pascal, F.
    Sagnes, B.
    Haendler, S.
    2014 10TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2014), 2014,
  • [2] Source of Low Frequency Noise in SiGe HBTs
    王凯
    刘远
    邓婉玲
    Journal of Donghua University(English Edition), 2015, 32 (06) : 1052 - 1054
  • [3] A 330 GHz Frequency Modulator using 0.13-μm SiGe HBTs
    Li, Yihu
    Xiong, Yong-Zhong
    Goh Wang-Ling
    2014 14TH INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2014, : 288 - 291
  • [4] High-Frequency Noise Characterization and Modeling of SiGe HBTs
    Cheng, Peng
    Shichijo, Hisashi
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2018, 66 (12) : 5169 - 5175
  • [5] Impact of lateral scaling on low frequency noise of 200 GHz SiGe:C HBTs
    Venegas, R
    Ouassif, N
    Piontek, A
    Van Huylenbroeck, S
    Decoutere, S
    Noise and Fluctuations, 2005, 780 : 253 - 256
  • [6] Influence of carbon incorporation on the low frequency noise of Si/SiGe:C HBTs based on 0.25 μm BiCMOS technology
    Benoit, P
    Raoult, J
    Delseny, C
    Pascal, F
    Vildeuil, JC
    Szelag, B
    Monroy, A
    Noise and Fluctuations, 2005, 780 : 257 - 260
  • [7] Low noise microwave SiGe HBTs
    Qian, Wei
    Zhang, Jinshu
    Jia, Hongyong
    Lin, Huiwang
    Tsien, Peixin
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (05): : 445 - 450
  • [8] An Investigation of Low-Frequency Noise in Complementary SiGe HBTs on SOI
    Cheng, Peng
    Horst, Stephen
    Phillips, Stanley
    Seth, Sachin
    Mills, Richie
    Cressler, John D.
    Cestra, Greg
    Krakowski, Tracey
    Babcock, Jeff A.
    Buchholz, Alan
    2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, : 165 - 168
  • [9] Low-Frequency Noise in Advanced SiGe:C HBTs-Part I: Analysis
    Mukherjee, Chhandak
    Jacquet, Thomas
    Chakravorty, Anjan
    Zimmer, Thomas
    Boeck, Josef
    Aufinger, Klaus
    Maneux, Cristell
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) : 3649 - 3656
  • [10] DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs
    Washio, Katsuyoshi
    THIN SOLID FILMS, 2008, 517 (01) : 6 - 9
12345