Interface phenomena between CdTe and ZnTe:Cu back contact

被引：34

作者：

Bosio, A. ^{[1
]}

Ciprian, R. ^{[2
]}

Lamperti, A. ^{[3
]}

Rago, I ^{[2
]}

Ressel, B. ^{[4
]}

Rosa, G. ^{[1
]}

Stupar, M. ^{[4
]}

Weschke, E. ^{[5
]}

机构：

[1] Univ Parma, Parco Area Sci 7-A, I-43124 Parma, Italy

[2] Elettra Sincrotrone Trieste, Ss 14 Km 163-5, I-34149 Trieste, Italy

[3] CNR, IMM, Agrate Unit, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy

[4] Univ Nova Gorica, Vipavska Cesta 11c, Ajdovscina 5270, Slovenia

[5] Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany

来源：

SOLAR ENERGY | 2018年 / 176卷

关键词：

CdTe; ZnTe:Cu back-contact; XANES; ToF-SIMS; X-RAY-ABSORPTION; CU THIN-FILMS; SOLAR-CELLS; DOPED ZNTE; STABILITY; PHOTOELECTRON; TELLURIDE; LAYER; CUXTE; XPS;

D O I：

10.1016/j.solener.2018.10.035

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray photoemission spectroscopy (SIPS) and time-of-flight secondary ion mass spectrometry (ToF- SIMS) to deeply analyze the intermixing phenomena and copper behavior inside polycrystalline CdTe film.

引用

页码：186 / 193

页数：8

共 48 条

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