Light helicity detector based on 2D magnetic semiconductor Crl3

被引：45

作者：

Cheng, Xing ^{[1
,2
,3
]}

Cheng, Zhixuan ^{[1
,2
,3
]}

Wang, Cong ^{[4
]}

Li, Minglai ^{[1
,2
,3
]}

Gu, Pingfan ^{[1
,2
,3
]}

Yang, Shiqi ^{[5
]}

Li, Yanping ^{[1
,2
]}

Watanabe, Kenji ^{[6
]}

Taniguchi, Takashi ^{[6
]}

Ji, Wei ^{[4
]}

Dai, Lun ^{[1
,2
,3
,7
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, Beijing 100871, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[4] Renmin Univ China, Dept Phys, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China

[5] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China

[6] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[7] Peking Univ, Yangtze Delta Inst Optoelect, Beijing 100871, Peoples R China

来源：

NATURE COMMUNICATIONS | 2021年 / 12卷 / 01期

基金：

中国国家自然科学基金;

关键词：

FERROMAGNETISM; CRYSTAL;

D O I：

10.1038/s41467-021-27218-3

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-Crl(3)-graphene vdW hetero-structures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer Crl(3) devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of Crl(3). We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer Crl(3). A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in Crl(3) and paves the way to developing spin-optoelectronic devices.

引用

页数：6

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