Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

被引：17

作者：

Urabe, Yuji ^{[1
]}

Yokoyama, Masafumi ^{[2
]}

Takagi, Hideki ^{[1
]}

Yasuda, Tetsuji ^{[1
]}

Miyata, Noriyuki ^{[1
]}

Yamada, Hisashi ^{[3
]}

Fukuhara, Noboru ^{[3
]}

Hata, Masahiko ^{[3
]}

Takenaka, Mitsuru ^{[2
]}

Takagi, Shinichi ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Tokyo 1138656, Japan

[3] Sumitomo Chem, Tsukuba, Ibaraki 3003294, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 25期

关键词：

HIGH-K; MOBILITY; MOSFETS;

D O I：

10.1063/1.3528334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on In0.53Ga0.47As(100)-on-insulator metal-insulator-semiconductor field-effect transistors (InGaAs-OI MISFETs) on Si wafers with standard front-gate configuration. The channel mobility of the InGaAs-OI MISFETs was higher than those for InGaAs MISFETs on bulk InP wafers. The on/off ratio was controlled over a wide range by applying a back-gate bias, which indicates the possibility of double-gate operation for higher drivability and lower power consumption. (C) 2010 American Institute of Physics. [doi:10.1063/1.3528334]

引用

页数：3

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