Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface

被引：25

作者：

Tan, SW

Chen, HR

Chu, MY

Chen, WT

Lin, AH

Hsu, MK

Lin, TS

Lour, WS

机构：

[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan

[2] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung, Taiwan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 37卷 / 06期

关键词：

InGaP/GaAs; heterojunction; current gain; sulfur treatment;

D O I：

10.1016/j.spmi.2005.02.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper reports on InGaP/GaAs heterojunction bipolar transistors (HBTs) with a sulfur-treated base layer, which are then compared to InGaP/GaAs HBTs with an InGaP-passivated base layer. Experimental results reveal that the improvement in base leakage current for InGaP-passivated HBTs is due to the inherent low surface recombination velocity associated with an InGaP layer while it is the electronic modification of the GaAs surface for sulfur-treated HBTs. The maximum dc current gain available is beta = 75 with a base sheet resistance of R-B = 220 Omega/square for a sulfur-passivated HBT. The sulfur-passivated HBTs also exhibit very good linearity over a wide collector current range of 10(-5) to 10(-1) A. Furthermore, detailed sulfur treatment conditions and effects on device performances including post-treatment stability are investigated. (c) 2005 Elsevier Ltd. All rights reserved.

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收藏

页码：401 / 409

页数：9

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