Structural and electrical anisotropy and high absorption in poly-Si films prepared by catalytic chemical vapor deposition

被引：12

作者：

Masuda, A ^{[1
]}

Iiduka, R ^{[1
]}

Heya, A ^{[1
]}

Niikura, C ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

catalytic chemical vapor deposition (cat-CVD); hot-wire chemical vapor deposition (hot-wire CVD); polycrystalline Si (poly-Si) films; crystalline fraction; conductivity;

D O I：

10.1016/S0022-3093(98)00259-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Structural, electrical and optical properties of polycrystalline Si (poly-Si) films prepared by catalytic chemical vapor deposition (cat-CVD) method, often called hot-wire CVD method, are demonstrated. Crystalline fraction for the poly-Si films is easily controlled between about 0% and 80% by changing the flow-rate ratio of SiH4 to H-2 during deposition. Transmission electron microscopy (TEM) observation reveals that cat-CVD poly-Si films with large crystalline fractions consist of columnar grains surrounded with an interlayer amorphous phase. Directional anisotropy in electrical conductivity is also observed, which is correlated with the structural anisotropy observed by TEM. Differences in the property of an amorphous layer in the poly-Si films is also indicated by the temperature-dependence of the conductivity. The origin of the absorption coefficient of cat-CVD poly-Si films is also discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：987 / 991

页数：5