Deformation potential of wide-gap semiconductors

被引：0
|
作者：
Davydov, SY
Tikhonov, SK
机构：
来源：
SEMICONDUCTORS | 1996年 / 30卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The deformation potential for diamond, silicon carbide, and the nitrides of boron, aluminum, and gallium is estimated in terms of Harrison's method of binding orbitals, The results of the calculation for silicon carbide agree well with the experimental data. (C) 1996 American Institute of Physics.
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页码：602 / 602
页数：1
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