A study on the crystallization behavior of nitrogen doped Ge2Sb2Te5 thin film

被引：18

作者：

Kim, SM

Jun, JH

Choi, DJ

Hong, SK

Park, YJ

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seodaemun Ku, Seoul 120749, South Korea

[2] Hynix Semiconductor Inc, Memory Res & Dev Div, Kyonggi Do 467860, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期

关键词：

Ge2Sb2Te5; film; nitrogen doping; transmission electron microscopy; mapping;

D O I：

10.1143/JJAP.44.L208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the crystallization behaviors of nitrogen doped Ge2Sb2Te5 thin films deposited in various nitrogen gas flow rates by means of the 4-point probe technique, X-ray diffraction and transmission electron microscopy (TEM), and we mapped the change of crystallization behavior on annealing temperatures. Nitrogen doping resulted in an increase of crystallization temperature from amorphous to fee structure and maintained the fcc structure up to a higher annealing temperature than undoped film did. However, crystallization behavior in heavily nitrogen-doped film occurred from an amorphous directly to a hexagonal state, skipping the fee crystallization step.

引用

页码：L208 / L210

页数：3

共 8 条

[1]

Horii H., 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), P177, DOI 10.1109/VLSIT.2003.1221143

[2] Crystal structure and microstructure of nitrogen-doped Ge2Sb2Te5 thin film [J].

Jeong, TH ;

Kim, MR ;

Seo, H ;

Park, JW ;

Yeon, C .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (5A) :2775-2779

[3] Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory [J].

Kim, SM ;

Shin, MJ ;

Choi, DJ ;

Lee, KN ;

Hong, SK ;

Park, YJ .

THIN SOLID FILMS, 2004, 469 :322-326

[4] Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques [J].

Kulkarni, AK ;

Schulz, KH ;

Lim, TS ;

Khan, M .

THIN SOLID FILMS, 1999, 345 (02) :273-277

[5]

LAI S, 2001, IEDM, P803

[6] Density changes upon crystallization of Ge2Sb2.04Te4.74 films [J].

Njoroge, WK ;

Wöltgens, HW ;

Wuttig, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (01) :230-233

[7] Investigation of crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films [J].

Seo, H ;

Jeong, TH ;

Park, JW ;

Yeon, C ;

Kim, SJ ;

Kim, SY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (2B) :745-751

[8]

Yi JH, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P901

← 1 →